| PART |
Description |
Maker |
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| SGSP575 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
STMICROELECTRONICS
|
| IRFU322 |
2.3 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| 2N6760TXV |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
MICROSEMI CORP
|
| IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SIHF740STRL-GE3 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| SIHF730A-E3 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| PHW10N40E |
10.6 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
NXP SEMICONDUCTORS
|
| IRF450 |
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET
|
HARRIS SEMICONDUCTOR
Fairchild Semiconductor
Intersil Corporation
|
|
